5 September 2001 Up-to-date activities of PXL (proximity x-ray lithography)
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438381
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Abstract
PXL technologies in Japan have highly improved during the period of ASET program. A newly developed EB writer and the writing processes achieved accuracy of image-placement <10nm and CD uniformity <7nm(3(sigma) ). Together with the improvement of absorber materials, X-ray masks required for the 100nm technical node were fabricated and those for 70nm node are within achievable levels. The alignment accuracy about 20nm and the use of magnification correction have verified the overlay accuracy <30nm, which is sufficient to 100nm node. BY improving the alignment accuracy, the exposure of 70nm node may be possible by using the present stepper. Furthermore, the next generation system with shorter wavelength may open the door for 50nm node and below.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuji Matsui, Takao Taguchi, Yoshinori Nakayama, Yukiko Kikuchi, Shinji Tsuboi, Hiroaki Sumitani, "Up-to-date activities of PXL (proximity x-ray lithography)", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438381; https://doi.org/10.1117/12.438381
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