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5 September 2001 Utilization of assisting features in contact-hole mask repair
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001)
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
The present study aims to evaluate the utilization of assisting features in the contact-hole mask repair. Several different types of assisting features were considered, including positive serifs, constant bias, assisting bars, and assisting dimples. In brief, a test mask was fabricated to render various extent of quartz damage using a focused- ion beam mask repair tool, followed by adding assisting features. The repaired contact holes were examined first by AIMS 193 (193 nm aerial image measurement system) for their optical transmission, critical dimension (CD), and exposure- defocus window (ED). Figure 1 and 2 illustrate some preliminary results acquired from AIMS 193. As revealed from Figure 2, the center of the exposure-defocus window is shifted by variant extend with adding different types of assisting features. Wafer printed results would be used to further verify AIMS 193 observation. Optical simulation results of these repaired holes with assistant features will also be presented using Solid C simulation tool.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chia-Yang Chang, Chung-Hsing Chang, Chuan-Yuan Lin, C. C. Hung, Chien-Hung Lin, and John C.H. Lin "Utilization of assisting features in contact-hole mask repair", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001);

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