5 September 2001 Writing accuracy of EBM-3500 electron-beam mask writing system
Author Affiliations +
Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001); doi: 10.1117/12.438403
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
A high accuracy electron beam writing system EBM-3500 has been developed for 130 nm node lithography technology. The EBM-3500 is based on its predecessor EBM-3000 system and incorporates new features to improve writing accuracies. Based on the extensive error analyses of the EBM-3000, several important improvements in such areas as ground noise and stray magnetic field reductions, among others, have been made. Thanks to these improvements, EBM-3500 achieves high accuracies to satisfy the present and future technology requirements.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenji Ohtoshi, Hitoshi Sunaoshi, Jun Takamatsu, Fumiyuki Okabe, K. Ishibashi, Shusuke Yoshitake, Hirokazu Yamada, Shuichi Tamamushi, Hirohito Anze, T. Kamikobo, Yoji Ogawa, "Writing accuracy of EBM-3500 electron-beam mask writing system", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438403; https://doi.org/10.1117/12.438403

Beam shaping

Optical proximity correction


Electron beams


Vestigial sideband modulation

Electron beam lithography


Electron-Beam Lithography Error Sources
Proceedings of SPIE (June 18 1984)
Multi-shaped e-beam technology for mask writing
Proceedings of SPIE (September 24 2010)
MSB for ILT masks
Proceedings of SPIE (April 01 2011)

Back to Top