5 September 2001 Writing accuracy of EBM-3500 electron-beam mask writing system
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438403
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Abstract
A high accuracy electron beam writing system EBM-3500 has been developed for 130 nm node lithography technology. The EBM-3500 is based on its predecessor EBM-3000 system and incorporates new features to improve writing accuracies. Based on the extensive error analyses of the EBM-3000, several important improvements in such areas as ground noise and stray magnetic field reductions, among others, have been made. Thanks to these improvements, EBM-3500 achieves high accuracies to satisfy the present and future technology requirements.
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Kenji Ohtoshi, Hitoshi Sunaoshi, Jun Takamatsu, Fumiyuki Okabe, K. Ishibashi, Shusuke Yoshitake, Hirokazu Yamada, Shuichi Tamamushi, Hirohito Anze, T. Kamikobo, Yoji Ogawa, "Writing accuracy of EBM-3500 electron-beam mask writing system", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438403; https://doi.org/10.1117/12.438403
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