10 August 2001 Annealing of GaSb single crystals in ionized hydrogen atmosphere
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Abstract
GaSb undoped wafer were annealed in flowing ionized hydrogen atmosphere at temperature range between 100-350 degrees C for 1-50 hours. The free carrier concentration and resistivity were measured. It was found out that the wafers being treated at a temperature of 150 degrees C for 24 hours reached the resistivity of about 102-103 (Omega) cm and the free carrier concentration was lower than 1 by 1015 cm-3. However, the thickness of the passivated layer was only 0.4-0.6 micrometers .
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Bedrich Stepanek, Bedrich Stepanek, Vera Sestakova, Vera Sestakova, Jaroslav Sestak, Jaroslav Sestak, } "Annealing of GaSb single crystals in ionized hydrogen atmosphere", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435865; https://doi.org/10.1117/12.435865
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