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10 August 2001 Growth and dielectric properties of Ca4GdO(BO3)3 single crystals
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Abstract
Single crystals of Ca4GdO(BO3)3 have ben grown from a melt by the Czochralski puling method making use seed orientation. Defects, like dislocation were investigated. Chemical methods were developed on various planes of crystals, in order to reveal the nature and the distribution of these defects. Dielectric measurements in frequency range 20Hz-13MHz in three main crystallographic directions were carried out. The values of elastic and piezoelectric coefficients were calculated for the first mode of piezoelectric vibration in each direction.
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Andrzej Klos, Anna Pajaczkowska, Czeslaw Pawlaczyk, and Ewa Markiewicz "Growth and dielectric properties of Ca4GdO(BO3)3 single crystals", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435861
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