Investigation of system Si-O (SiOx) behavior in DAC at submegabar pressure

Borys M. Efros; Natalya V. Shishkova; Anatolii Prudnikov; Andrzej Misiuk; Jadwiga Bak-Misiuk; Juergen Hartwig

doi:10.1117/12.435809

10 August 2001 Investigation of system Si-O (SiO_x) behavior in DAC at submegabar pressure

Borys M. Efros, Natalya V. Shishkova, Anatolii Prudnikov, Andrzej Misiuk, Jadwiga Bak-Misiuk, Juergen Hartwig

Proceedings Volume 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals; (2001) https://doi.org/10.1117/12.435809
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

Extensive experiment studies of the IV elements have been made in recent years. Motivations have included the rich variety of phase and structural transitions.

Citation Download Citation

Borys M. Efros, Natalya V. Shishkova, Anatolii Prudnikov, Andrzej Misiuk, Jadwiga Bak-Misiuk, and Juergen Hartwig "Investigation of system Si-O (SiO_x) behavior in DAC at submegabar pressure", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435809

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