10 August 2001 Investigation of system Si-O (SiOx) behavior in DAC at submegabar pressure
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Abstract
Extensive experiment studies of the IV elements have been made in recent years. Motivations have included the rich variety of phase and structural transitions.
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Borys M. Efros, Natalya V. Shishkova, Anatolii Prudnikov, Andrzej Misiuk, Jadwiga Bak-Misiuk, Juergen Hartwig, "Investigation of system Si-O (SiOx) behavior in DAC at submegabar pressure", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435809; https://doi.org/10.1117/12.435809
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