10 August 2001 Investigation of system Si-O (SiOx) behavior in DAC at submegabar pressure
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Proceedings Volume 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals; (2001); doi: 10.1117/12.435809
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland
Abstract
Extensive experiment studies of the IV elements have been made in recent years. Motivations have included the rich variety of phase and structural transitions.
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Borys M. Efros, Natalya V. Shishkova, Anatolii Prudnikov, Andrzej Misiuk, Jadwiga Bak-Misiuk, Juergen Hartwig, "Investigation of system Si-O (SiOx) behavior in DAC at submegabar pressure", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435809; https://doi.org/10.1117/12.435809
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KEYWORDS
Silicon

Silica

Crystals

Oxygen

Protactinium

X-rays

Diamond

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