Modeling of the carrier mobility at the silicon oxynitride-silicon interface

Kazimierz Jerzy Plucinski

doi:10.1117/12.435852

10 August 2001 Modeling of the carrier mobility at the silicon oxynitride-silicon interface

Kazimierz Jerzy Plucinski

Proceedings Volume 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals; (2001) https://doi.org/10.1117/12.435852
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

The main issue which is yet to be resolved in further developing the Surface Channel MOSFETs is understanding and eliminating deterioration of the carrier mobility at the insulator-semiconductor interface. The main factor causing this deterioration is hole and electron trapping-detrapping. One of the ways recently suggested of minimizing hole and electron trapping-detrapping at the Si-SiO₂ interface involves replacing the SiO₂ by silicon oxynitride. However, degradation of MOSFETs, which have oxynitrides as gate dielectric, caused by trapping of hot electrons from the channel, is still found.

Citation Download Citation

Kazimierz Jerzy Plucinski "Modeling of the carrier mobility at the silicon oxynitride-silicon interface", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435852

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