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10 August 2001 Semiconductor surface characterization by scanning probe microscopies
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Abstract
Besides the well-known 3D surface topography, scanning probe methods give access to a whole world of local physical information on solid surfaces. Here, we demonstrate opportunities given by scanning tunneling spectroscopy (STS) and scanning electrical force microscopy/spectroscopy. In this paper, we compare the wide-spread UHV-STM/STS technique with ambient SEFM/SEFS. After short description of the methods, some applications to semiconductor surfaces are discussed. Possibly SEFS has a great potential for local electronic spectroscopy in near future.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Hietschold, Anne-D. Mueller, and Falk Mueller "Semiconductor surface characterization by scanning probe microscopies", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435824
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