10 August 2001 Theory of behavior of ionized hydrogen in GaSb crystal structure
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Abstract
Using the thermodynamical studies it seems proved that ionized hydrogen acts as amphoteric dopant of GaSb. It is splitting to H+ and H- and between these two kinds certain equilibrium is created depending on the concentration of acceptor's and donor's impurities in the GaSb material. There is an inclination of such a crystal to maintain the GaSb structure to be iso electric. This behavior has been studied on undoped and slightly Te-doped GaSb single crystal grown by use of the Czochralski method without encapsulant under a flow of ionized hydrogen. For comparison the studies were repeated under a flow of molecular hydrogen.
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Vera Sestakova, Bedrich Stepanek, Jaroslav Sestak, "Theory of behavior of ionized hydrogen in GaSb crystal structure", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435817; https://doi.org/10.1117/12.435817
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