Thermal ionization energy of Mg acceptors in GaN: effects of doping level and compensation

Balint Podor

doi:10.1117/12.435848

10 August 2001 Thermal ionization energy of Mg acceptors in GaN: effects of doping level and compensation

Balint Podor

Proceedings Volume 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals; (2001) https://doi.org/10.1117/12.435848
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

It is shown that the thermal ionization energy of Mg acceptors in GaN, as determined by temperature dependent Hall effect measurements, exhibits the usual dependence on the concentration of ionized impurities, as seen in many other semiconductors. The observed difference in the thermal and optical ionization energies of Mg acceptors can be quantitatively understood based on a simple electrostatic interaction model.

Citation Download Citation

Balint Podor "Thermal ionization energy of Mg acceptors in GaN: effects of doping level and compensation", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435848

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