10 August 2001 X-ray study of Nd:YAG on (111)-oriented Si obtained by pulsed laser deposition
Author Affiliations +
Abstract
Yttrium aluminium garnet thin films doped with neodymium have been prepared by Pulsed Laser Deposition method on (111)-oriented Si substrates. The substrate was heated up to temperature in the range between 200 and 600 degrees C. Obtained films were then characterized both by x-ray diffraction method using Siemens D5000 diffracto-meter and radioluminescence spectroscopy.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roman Rumianowski, Roman Rumianowski, Roman S. Dygdala, Roman S. Dygdala, Franciszek Rozploch, Franciszek Rozploch, Andrzej J. Wojtowicz, Andrzej J. Wojtowicz, Monika Wisniewska, Monika Wisniewska, Slawomir Kulesza, Slawomir Kulesza, } "X-ray study of Nd:YAG on (111)-oriented Si obtained by pulsed laser deposition", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435867; https://doi.org/10.1117/12.435867
PROCEEDINGS
4 PAGES


SHARE
Back to Top