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10 August 2001 X-ray study of Nd:YAG on (111)-oriented Si obtained by pulsed laser deposition
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Abstract
Yttrium aluminium garnet thin films doped with neodymium have been prepared by Pulsed Laser Deposition method on (111)-oriented Si substrates. The substrate was heated up to temperature in the range between 200 and 600 degrees C. Obtained films were then characterized both by x-ray diffraction method using Siemens D5000 diffracto-meter and radioluminescence spectroscopy.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roman Rumianowski, Roman S. Dygdala, Franciszek Rozploch, Andrzej J. Wojtowicz, Monika Wisniewska, and Slawomir Kulesza "X-ray study of Nd:YAG on (111)-oriented Si obtained by pulsed laser deposition", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435867
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