10 August 2001 X-ray study of Nd:YAG on (111)-oriented Si obtained by pulsed laser deposition
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Yttrium aluminium garnet thin films doped with neodymium have been prepared by Pulsed Laser Deposition method on (111)-oriented Si substrates. The substrate was heated up to temperature in the range between 200 and 600 degrees C. Obtained films were then characterized both by x-ray diffraction method using Siemens D5000 diffracto-meter and radioluminescence spectroscopy.
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Roman Rumianowski, Roman Rumianowski, Roman S. Dygdala, Roman S. Dygdala, Franciszek Rozploch, Franciszek Rozploch, Andrzej J. Wojtowicz, Andrzej J. Wojtowicz, Monika Wisniewska, Monika Wisniewska, Slawomir Kulesza, Slawomir Kulesza, } "X-ray study of Nd:YAG on (111)-oriented Si obtained by pulsed laser deposition", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435867; https://doi.org/10.1117/12.435867

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