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17 April 2001 Analysis of two-dimensional PITS spectra for characterization of defect centers in high-resistivity materials
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Abstract
Deep states in semi-insulating Si are investigated by analyzing of two-dimensional Photo-Induced Transient Spectroscopy (PITS) spectra. The results exemplify new potentialities of the advanced computer programming technique.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michal Pawlowski, M. Miczuga, Pawel Kaminski, and Roman Kozlowski "Analysis of two-dimensional PITS spectra for characterization of defect centers in high-resistivity materials", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425431
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