Chemical processing of GaSb related to surface preparation and patterning

Ewa Papis-Polakowska; Anna Piotrowska; E. Kaminska; M. Guziewicz; Tadeusz T. Piotrowski; Andrzej Kudla; A. Wawro

doi:10.1117/12.425408

17 April 2001 Chemical processing of GaSb related to surface preparation and patterning

Ewa Papis-Polakowska, Anna Piotrowska, E. Kaminska, M. Guziewicz, Tadeusz T. Piotrowski, Andrzej Kudla, A. Wawro

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425408
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

The effects of various chemical treatments on (100) GaSb surface with the aim to develop procedures of polishing of GaSb substrates, surface preparation prior to LPE growth, metal and dielectric deposition, fabrication of patterns have been examined. We show that chemomechanical polishing in Br₂ - ethylene glycol followed by anodic oxidation and oxide removal enables to fabricate damage free GaSb surface with the roughness of about 1.5 nm. Surface treatment in 30 HCL-1HNO₃ followed by 5%HCL etch gives the best results for surface cleaning prior to metal deposition. The optimum pre-epitaxial treatment includes the use of 1M Na₂S solution and H₂ anneal. For features patterning 60HCL-1H₂O₂-1H₂O enables etching at rate of approximately 4 micrometers /min, however, to achieve highly anisotropic etching of small size features the use of Ccl₄/H₂ plasma is the most suitable.

Citation Download Citation

Ewa Papis-Polakowska, Anna Piotrowska, E. Kaminska, M. Guziewicz, Tadeusz T. Piotrowski, Andrzej Kudla, and A. Wawro "Chemical processing of GaSb related to surface preparation and patterning", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425408

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