17 April 2001 Chemical processing of GaSb related to surface preparation and patterning
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Abstract
The effects of various chemical treatments on (100) GaSb surface with the aim to develop procedures of polishing of GaSb substrates, surface preparation prior to LPE growth, metal and dielectric deposition, fabrication of patterns have been examined. We show that chemomechanical polishing in Br2 - ethylene glycol followed by anodic oxidation and oxide removal enables to fabricate damage free GaSb surface with the roughness of about 1.5 nm. Surface treatment in 30 HCL-1HNO3 followed by 5%HCL etch gives the best results for surface cleaning prior to metal deposition. The optimum pre-epitaxial treatment includes the use of 1M Na2S solution and H2 anneal. For features patterning 60HCL-1H2O2-1H2O enables etching at rate of approximately 4 micrometers /min, however, to achieve highly anisotropic etching of small size features the use of Ccl4/H2 plasma is the most suitable.
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Ewa Papis-Polakowska, Anna Piotrowska, E. Kaminska, M. Guziewicz, Tadeusz T. Piotrowski, Andrzej Kudla, A. Wawro, "Chemical processing of GaSb related to surface preparation and patterning", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425408; https://doi.org/10.1117/12.425408
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