Current instabilities in GaAs/InAs quantum dot structures

Zsolt J. Horvath; Balint Podor; P. Frigeri; Santina Franchi; E. Gombia; R. Mosca; Vo Van Tuyen; L. Dozsa

doi:10.1117/12.425420

17 April 2001 Current instabilities in GaAs/InAs quantum dot structures

Zsolt J. Horvath, Balint Podor, P. Frigeri, Santina Franchi, E. Gombia, R. Mosca, Vo Van Tuyen, L. Dozsa

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425420
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

Unexpected excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with the high recombination rate through quantum dots. The instabilities are connected with unstable charge occupation of quantum dots.

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Zsolt J. Horvath, Balint Podor, P. Frigeri, Santina Franchi, E. Gombia, R. Mosca, Vo Van Tuyen, and L. Dozsa "Current instabilities in GaAs/InAs quantum dot structures", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425420

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