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17 April 2001 Current instabilities in GaAs/InAs quantum dot structures
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Abstract
Unexpected excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with the high recombination rate through quantum dots. The instabilities are connected with unstable charge occupation of quantum dots.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zsolt J. Horvath, Balint Podor, P. Frigeri, Santina Franchi, E. Gombia, R. Mosca, Vo Van Tuyen, and L. Dozsa "Current instabilities in GaAs/InAs quantum dot structures", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425420
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