17 April 2001 Deep-level defects in semi-insulating LT MBE GaAs
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Abstract
High resolution photo induced transient spectroscopy has been utilized to study defect centers in semi-insulating molecular beam epitaxy GaAs grown at temperatures 300 and 400 $DEGC. A number of traps with activation energies ranging from 0.004 to 0.64 eV have been detected. The traps are tentatively identified with native defects in GaAs lattice. The effect of the growth temperature on the defect structure of the layers is shown.
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Roman Kozlowski, Pawel Kaminski, Peter Kordos, Michal Pawlowski, Robert Cwirko, "Deep-level defects in semi-insulating LT MBE GaAs", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425430; https://doi.org/10.1117/12.425430
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