17 April 2001 Effect of the alpha-particle irradiation on the photoluminescence and Raman spectroscopy from GaAs/Al0.3Ga0.7As quantum wells and coupling coefficients for the light and heavy holes
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Abstract
The epitaxial grown GaAs quantum wells (Qws) (with the width L1=2.5nm and L2=15nm) were subjected to alpha particle irradiation at doses (7.8*1012-3.4*1013)cm-2. The response of the Qws was studied by means of the low temperature photo luminescence (PL) and inelastic light spectroscopy. The damage accumulation leads to a shift of the quasi particle energy level towards higher energy and to a decrease of the LO1 and LO2 modes and to an increase of the TO2 frequency mode of the Al0.3Ga0.7As slabs.
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Herbert W. Kunert, "Effect of the alpha-particle irradiation on the photoluminescence and Raman spectroscopy from GaAs/Al0.3Ga0.7As quantum wells and coupling coefficients for the light and heavy holes", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425419; https://doi.org/10.1117/12.425419
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