17 April 2001 Epitaxy on GaN bulk crystals
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Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001); doi: 10.1117/12.425412
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland
Abstract
The article shows the most important experimental results describing the properties of nitride layers on GaN single crystals. The layers were grown using metal-organic chemical vapor deposition (MOCVD). The growth was monitored by in-situ laser reflectometry. The layers contain very small dislocation density of about 10 to 103 cm$min2 (the same as in GaN substrates). Morphology and crystallographic quality was examined using atomic force microscopy and X-ray diffraction. The layers have excellent photo luminescent properties which have a direct impact on the optoelectronic device properties.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Leszczynski, P. Prystawko, R. Czernecki, J. Lehnert, Piotr Perlin, P. Wisniewski, Cz. Skierbiszewski, T. Suski, G. Nowak, Fouad Karouta, J. Holst, I. Grzegory, S. Porowski, "Epitaxy on GaN bulk crystals", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425412; https://doi.org/10.1117/12.425412
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KEYWORDS
Gallium nitride

Crystals

Metalorganic chemical vapor deposition

Sapphire

X-ray diffraction

Epitaxy

Luminescence

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