17 April 2001 Growth and photoelectric properties of polycrystal Pb1-x-yGexSnyTe:In thin films
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Abstract
Pb1-x-yGexSnyTe:In thin films were made using hot wall modified method. The composition of grown films approximately corresponds to the initial composition of the polycrystalline charge when using this method. Maximum observed concentration deviation (in comparison to charge) of different components in resulting films was: (Delta) nPbGeSn
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Alexander I. Dirochka, Vladimir F. Chishko, Igor L. Kasatkin, Vyacheslav N. Vasil'kov, Alexandre G. Moisseenko, "Growth and photoelectric properties of polycrystal Pb1-x-yGexSnyTe:In thin films", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425409; https://doi.org/10.1117/12.425409
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