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17 April 2001 Growth, structure, and spectroscopic characterization of the Mn-doped GaN thin films
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Abstract
The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. The dependence of GaN-Mn thin films deposition rate on rf-discharge power, substrate temperature and working gas pressure was estimated. The influence of technological conditions of deposition on crystal structure parameters of gallium nitride thin films were investigated. Luminescence and electron spin resonance (ESR) spectra of GaN-Mn thin films have been studied.
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Vyacheslav D. Bondar, Igor Kukharsky, Bohdan V. Padlyak, Volodymyr Davydov, Bohdan O. Simkiv, Marek Grinberg, and Benedykt Kuklinski "Growth, structure, and spectroscopic characterization of the Mn-doped GaN thin films", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425402
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