17 April 2001 Impact of the LWIR photodiodes geometry on their basic parameters
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Abstract
This paper concerns HgCdTe heterostructure photodiodes for detection of infrared radiation from 8-12micrometers spectral range. Heterostructures were made by liquid phase epitaxy on the CdZnTe substrates. The cap layer of wider energy gap was used to suppress the generation-recombination current from the top contact. P-on-n junctions were placed in the narrow band-gap area close to the graded region. It was accomplished by appropriate selection of the cap layer thickness and adequate choice of parameters of the As diffusion process. Photodiodes were mesa delineated and illuminated through the substrate. Analysis of the impact of p-n junction location within a heterostructure, contact locations and mesa depth on photo diode parameters, was carried out. The experimental results were compared with two-dimensional numerical calculations performed in APSYS.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jakub Wenus, Jakub Wenus, Jaroslaw Rutkowski, Jaroslaw Rutkowski, Krzysztof Adamiec, Krzysztof Adamiec, Leszek Kubiak, Leszek Kubiak, Pawel Madejczyk, Pawel Madejczyk, } "Impact of the LWIR photodiodes geometry on their basic parameters", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425457; https://doi.org/10.1117/12.425457
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