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17 April 2001 LPE growth of Hg1-xCdxTe heterostructures from Te-rich solutions
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Abstract
The successful fabrication of long wavelength Hg1-yCdyTe/Hg1-xCdxTe heterostructures (Y$GTRx) on semi- insulating (111)CdZnTe substrates is presented. The heterostructures consist of a thin 2-5 micrometers layer on n-type 10- 15 micrometers thick HgCdTe epilayer. A novel tipping boat for liquid phase epitaxial growth of mercury cadmium telluride from Te-rich solutions has been proposed. The characterization of double- layer heterostructures was carried out using different methods: microscopic examinations, infrared microscopic transmission, and scanning electron microscopic measurements. Electrical properties were measured in temperature range of 77-300 K using the Van der Pauw arrangement. By optimizing the growth parameters and the construction of graphite boat it was possible to obtain high quality, relatively abrupt Hg1-xCdxTe heterostructures.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leszek Kubiak, Krzysztof Adamiec, Pawel Madejczyk, Jakub Wenus, Piotr Martyniuk, and Jaroslaw Rutkowski "LPE growth of Hg1-xCdxTe heterostructures from Te-rich solutions", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425410
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