Laser epitaxy of HgCdTe ternary alloy

Igor S. Virt; Igor A. Rudyj; Ivan Kurilo; Marian Fruginskyj; Marian Kuzma; Ireneusz Stefaniuk

doi:10.1117/12.425406

17 April 2001 Laser epitaxy of HgCdTe ternary alloy

Igor S. Virt, Igor A. Rudyj, Ivan Kurilo, Marian Fruginskyj, Marian Kuzma, Ireneusz Stefaniuk

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425406
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

In the paper, an analysis of experimental conditions of pulsed laser deposition (PLD) of A^IIB^VI ternary alloy layers is presented. The growth conditions and photoelectric parameters of the layers have been measured. Two lasers were used for the ablation: YAG:Nd³⁺ and excimer XaCl. Photo-electrical properties of HgCdTe layers have been measured in the spectral range of 4-11 micrometers . Electro-physical properties confirmed the high carrier mobilities and low electron concentrations. Crystallographic quality of the layers has been varied depending on the kind of substrate. Their structure changes from amorphous via polycrystalline to the oriented mosaic. The PLD method allows easily obtaining periodic structures of varying layers composition with period d<10A.

Citation Download Citation

Igor S. Virt, Igor A. Rudyj, Ivan Kurilo, Marian Fruginskyj, Marian Kuzma, and Ireneusz Stefaniuk "Laser epitaxy of HgCdTe ternary alloy", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425406

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