Optical measurements of strain and stress in thin films

Sigitas Tamulevicius; Liudvikas Augulis; Giedrius Laukaitis

doi:10.1117/12.425439

17 April 2001 Optical measurements of strain and stress in thin films

Sigitas Tamulevicius, Liudvikas Augulis, Giedrius Laukaitis

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425439
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

Principles and applications of the cantilever technique to measure strain and stress in thin films are presented. Different optical interferometers were created and applied to control stress-thickness dependence during technological processes or to measure two-dimensional strain distribution in thin film. An original scheme combining advantages of the classical interferometer and electronic speckle pattern interferometer is presented.

Citation Download Citation

Sigitas Tamulevicius, Liudvikas Augulis, and Giedrius Laukaitis "Optical measurements of strain and stress in thin films", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425439

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