17 April 2001 Stress-induced effects in semiconducting epitaxial layers
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Abstract
The effect of high temperature-high pressure (HT-HP) treatment of semiconducting layers on their structural properties was investigated by X-ray methods. The changes of the strain state of the samples induced by the HT-HP treatment depend on the initial strain state and growth method of thin layers. Only for the layers obtained by MBE methods the change of strain state of layers was found. Decrease of the dislocation density was detected for relaxed InAs/GaAs layers after the treatment at 673K - 1.1 Gpa for 1 h. For strained AlGaAs/GaAs samples the pressure - induces stress is responsible for creation of dislocation.
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Jadwiga Bak-Misiuk, Jadwiga Bak-Misiuk, J. Domagala, J. Domagala, Andrzej Misiuk, Andrzej Misiuk, Janusz Kaniewski, Janusz Kaniewski, J. Adamczewska, J. Adamczewska, J. Trela, J. Trela, Kazimierz Reginski, Kazimierz Reginski, D. Dobosz, D. Dobosz, M. Prujszczyk, M. Prujszczyk, J. C. Tedenac, J. C. Tedenac, } "Stress-induced effects in semiconducting epitaxial layers", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425443; https://doi.org/10.1117/12.425443
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