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17 April 2001 Visible photoluminescence from Ge+-ion-implanted SiOxNy annealed under hydrostatic pressure
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Abstract
New experiments are reported which explore the influence of the hydrostatic pressure during post-implantation annealing on the photoluminescence (PL) from silicon oxynitride layers (SiOxNy, x=0.25, y=1) implanted with Ge+ ions. It is shown that the use of a hydrostatic pressure during heat treatment results in an enhancement of the PL intensity by an order of magnitude compared with that arising from anneals carried out at atmospheric pressure. The observed increase in the PL intensity is explained in terms of the enhanced formation of radiative recombination canters within meta-stable regions of the implanted silicon oxynitride. The nature of these centers is believed to be associated with the equalsVSi-SiequalsV) center and defect complexes incorporating Ge atoms (e.g. equalsVSi-GeequalsV) or equalsVGe-GeequalsV) centers).
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Ida E. Tyschenko, K. S. Zhuravlev, E. N. Vandyshev, Andrzej Misiuk, Rossen A. Yankov, Lars Rebohle, and Wolfgang Skorupa "Visible photoluminescence from Ge+-ion-implanted SiOxNy annealed under hydrostatic pressure", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425438
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