14 September 2001 Negative-resistance characteristics studies in silicon double injection p+πn+ magnetic device
Author Affiliations +
Proceedings Volume 4414, International Conference on Sensor Technology (ISTC 2001); (2001) https://doi.org/10.1117/12.440216
Event: International Conference on Sensing units and Sensor Technology, 2001, Wuhan, China
Abstract
A new p+) (pi) n+ structure of silicon magnetic device is designed, using Lampert model and the Ashley- Milnes Space-Charge regime model analyzed double injection space-charge-limited current negative-resistance characteristic in p+ (pi) n+ structure of silicon magnetic device. Some useful approximate formulas and experimental results are also presented. The analysis gives results which closely represents practical situations.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dianzhong Wen, Dianzhong Wen, } "Negative-resistance characteristics studies in silicon double injection p+πn+ magnetic device", Proc. SPIE 4414, International Conference on Sensor Technology (ISTC 2001), (14 September 2001); doi: 10.1117/12.440216; https://doi.org/10.1117/12.440216
PROCEEDINGS
5 PAGES


SHARE
Back to Top