14 September 2001 Purifying of Ar gas in the InSb film sputtering fabrication process
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Proceedings Volume 4414, International Conference on Sensor Technology (ISTC 2001); (2001) https://doi.org/10.1117/12.440237
Event: International Conference on Sensing units and Sensor Technology, 2001, Wuhan, China
The film's sputtering fabrication has a lot of advantages than other technique. But it meets some difficulty in fabricating InSb film and the oxidation of In is one of them. Because the In among InSb is a kind of active element, and oxygen is in a ionogenic state in sputtering process, the In among InSb is easily oxidized. It will result in that InSb film loses its Hall effect. By analysis, we can find that the oxygen in vacuums mainly comes from the minimal oxygen among Ar gas. The spongy Ti absorbing in high temperature purifying technique was tested then. The temperature should be controlled at 900 degrees C. The purified effect won't be ideal if the temperature is low. The experimental result had been taken Auger electronic spectrum measure and the measured results are presented. The result indicate that the InSb film will not have O2 if use the Ar gas that had been purified. The results is perfect.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chengsong Sun, Chengsong Sun, Liwei Wang, Liwei Wang, Yongguang Wei, Yongguang Wei, Yanxia Guan, Yanxia Guan, Lijun Zhou, Lijun Zhou, } "Purifying of Ar gas in the InSb film sputtering fabrication process", Proc. SPIE 4414, International Conference on Sensor Technology (ISTC 2001), (14 September 2001); doi: 10.1117/12.440237; https://doi.org/10.1117/12.440237

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