14 September 2001 Sensing characteristics of WO3 thin film as NO2 gas sensor
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Proceedings Volume 4414, International Conference on Sensor Technology (ISTC 2001); (2001) https://doi.org/10.1117/12.440189
Event: International Conference on Sensing units and Sensor Technology, 2001, Wuhan, China
Abstract
The WO3 thin films were prepared by magnetron sputtering method on the 3mm by 3mm silicon substrates with Pt interdigitating electrodes and heater. The deposition and the operating temperatures were analyzed to optimize the technological parameters. The sensing properties of these films to NO2 gas were measured. The result indicate that the sensitivities are strongly dependent on the deposition and operating temperatures. The WO3 thin film deposited at 300 degrees C and then annealed in air at 600 degrees C for 4h shows the excellent sensing properties to NO2 gas at the operating temperature of 250 degrees C.
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Xiuli He, Xiuli He, Jianping Li, Jianping Li, Xiaoguang Gao, Xiaoguang Gao, } "Sensing characteristics of WO3 thin film as NO2 gas sensor", Proc. SPIE 4414, International Conference on Sensor Technology (ISTC 2001), (14 September 2001); doi: 10.1117/12.440189; https://doi.org/10.1117/12.440189
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