10 April 2001 Indentation creep and stress relaxation in amorphous As-S-Se and As-S films
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Proceedings Volume 4415, Optical Organic and Inorganic Materials; (2001) https://doi.org/10.1117/12.425511
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
The indentation creep in as-deposited and photopolymerized As- S-Se and As-S films has been investigated. The results show pronounced relaxation of mechanical stresses in the films at room temperature. The relationship (sigma) equals B (epsilon) m between the deformation rate and the stress is observed and the values of the deformation rate sensitivity exponent m < 1 are found. The creep rate was found to be dependent on deposition conditions of layers, applied indentation load, structural state of the material and light irradiation during the creep test.
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J. Maniks, J. Maniks, Ilze Manika, Ilze Manika, Janis Teteris, Janis Teteris, R. Pokulis, R. Pokulis, } "Indentation creep and stress relaxation in amorphous As-S-Se and As-S films", Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); doi: 10.1117/12.425511; https://doi.org/10.1117/12.425511

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