This work deals with electrophotographic parameters and structure of Se layers evaporated in vacuum upon aluminum or glass substrate. Prior to evaporation, a conducting polymer film covered the substrate -- this improves layer adhesion to the substrate. A phosphorous or tellurium sublayer was evaporated upon a thus prepared substrate. The tellurium sublayer speeds up crystallization of selenium (even at temperatures equal to room temperature, crystalline selenium sublayer forms between the amorphous selenium layer and tellurium sublayer). For this reason, layer sensitivity in the long-wavelength spectral region increases, whereas decrease of potential of a positively charged layer slows down, and the achievable potential increases. Evaporation of the amorphous selenium layer upon a phosphorus sublayer does not cause a significant change of electrophotographic properties of the layer, but formation of selenium crystals on the substrate ceases. Phosphorus neutralizes crystallization centers, which are present on the substrate (for example, tellurium islands, upon which phosphorus is evaporated, does not stimulate formation of selenium crystals any more. The same effect is observed if tellurium islands are evaporated, does not stimulate formation of selenium crystals any more. The same effect is observed if tellurium islands are evaporated upon phosphorus sublayer). Results presented in this work can be used in manufacture of an amorphous selenium layer without a crystalline selenium sublayer, or with a crystalline sublayer with a desired thickness.