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10 April 2001 Resonant intersubband transitions of holes in uniaxially stressed p-Ge
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Proceedings Volume 4415, Optical Organic and Inorganic Materials; (2001) https://doi.org/10.1117/12.425495
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
Abstract
Probabilities of intra- and intersubband acoustic scattering of holes in uniaxially stressed p-Ge in electric field are calculated. Perturbation of the free hole states by impurity potential is taken into account. Perturbation has a resonant nature and takes maximum values in the region of hole energy around energy position of quasi-local impurity state. Probabilities of acoustic and impurity scattering increase abruptly in that region. Calculated probabilities are used for Monte-Carlo simulation of hole motion in uniaxially stressed p-Ge in strong electric field. The essential influence of intersubband hole transitions with partaking of high-frequency acoustic phonons on the electric current is shown. Comparisons of theoretically obtained current-pressure dependences and experimental ones is performed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. A. Abramov, V. I. Akimov, A. T. Dalakyan, Victor N. Tulupenko, D. A. Firsov, Vladimir I. Gavrilenko, V. M. Bondar, and V. N. Poroshin "Resonant intersubband transitions of holes in uniaxially stressed p-Ge", Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); https://doi.org/10.1117/12.425495
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