10 April 2001 Screened Coulomb potential approach for the study of resonant impurity states in uniaxially deformed p-Ge
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Proceedings Volume 4415, Optical Organic and Inorganic Materials; (2001) https://doi.org/10.1117/12.425496
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
Abstract
The pressure-dependent behavior of quasi-local impurity states (QIS) induced by shallow impurity centers in uniaxially stressed p-Ge is described theoretically within screened Coulomb potential model. Dependences of energy position and broadening (lifetime) of QIS on pressure are calculated. They differ fundamentally from the results obtained within a short- range potential model. The wave functions of QIS are built. Perturbation of free hole wave function by the potential of a shallow acceptor is obtained analytically. Effective cross- section of impurity scattering of holes with QIS existing in valence band is calculated. Scattering cross-section dependence upon hole energy has a resonant character. The increase of pressure involves a decrease of cross-section values in the resonance region. Anisotropy of scattering cross-section is explained by anisotropy of free hole wave function perturbation in momentum space.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. A. Abramov, A. A. Abramov, V. I. Akimov, V. I. Akimov, Victor N. Tulupenko, Victor N. Tulupenko, D. A. Firsov, D. A. Firsov, Vladimir I. Gavrilenko, Vladimir I. Gavrilenko, V. N. Poroshin, V. N. Poroshin, } "Screened Coulomb potential approach for the study of resonant impurity states in uniaxially deformed p-Ge", Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); doi: 10.1117/12.425496; https://doi.org/10.1117/12.425496
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