10 April 2001 Silicon-based light-emitting materials: implanted SiO2 films and wide-bandgap a-Si:H
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Proceedings Volume 4415, Optical Organic and Inorganic Materials; (2001) https://doi.org/10.1117/12.425473
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
We review critically recent results of investigation of hydrogenated amorphous silicon (a-Si:H) and Si+- implanted SiO2 films from the point of view of light- emission applications. Wide bandgap a-Si:H with the energy gap ranging from 2.0 to 2.2 eV exhibits room temperature photoluminescence in the visible region. Electroluminescence, however, occurs after previous recrystallization of a-Si:H only and seems not to be perspective for large scale applications. Si+-implanted SiO2 films contain, after proper annealing at 1000 - 1100 degrees Celsius, Si nanocrystals that luminesce in the red. In parallel another emission band can occur (in the blue region) which is related to post-implantation defects. We demonstrate that in SiO2 films homogeneously implanted across the entire film thickness red electroluminescence can be easily observed, presumably due to injection of electron-hole pairs into Si nanocrystals. Finally, the present status of prospects of stimulated emission achievement in low-dimensional Si structures is briefly summarized.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivan Pelant, Ivan Pelant, Katerina Luterova, Katerina Luterova, Petr Fojtik, Petr Fojtik, Jean-Luc Rehspringer, Jean-Luc Rehspringer, Dominique Muller, Dominique Muller, Jean-Jacques Grob, Jean-Jacques Grob, Juraj Dian, Juraj Dian, Jan Valenta, Jan Valenta, Rolandas Tomasiunas, Rolandas Tomasiunas, Bernd H. Honerlage, Bernd H. Honerlage, } "Silicon-based light-emitting materials: implanted SiO2 films and wide-bandgap a-Si:H", Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); doi: 10.1117/12.425473; https://doi.org/10.1117/12.425473

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