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10 April 2001 Thin films of EuO-CeO2 semiconductor system
K. D. Scurtul, Alexandra N. Shmyryeva, Tatiana V. Semikina
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Proceedings Volume 4415, Optical Organic and Inorganic Materials; (2001) https://doi.org/10.1117/12.425480
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
Abstract
This work represents the results of synthesis and research of the thin film properties based on EuO-CeO2 system, which alter their properties in dependence on percent concentration of one of components. It was obtained that double-composition EuO-CeO2 oxide films with EuO content of 30 - 40 weight % demonstrate the extreme properties: a minimal dark conductivity is 10-10 (Omega) -1m-1, a maximal photo-sensibility and nonlinearity of current-voltage characteristics is 1.48, a minimal temperature resistance coefficient is 10-3 1/degree. In particular, the rare- earth semiconductor photoconductivity kinetics is connected with decreasing of photoconductivity relaxation time at illumination intensity gain. At illumination intensity of I equals 105 - 106 W/cm2 the photoconductivity relaxation time has been found to be 10-10 sec.
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K. D. Scurtul, Alexandra N. Shmyryeva, and Tatiana V. Semikina "Thin films of EuO-CeO2 semiconductor system", Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); https://doi.org/10.1117/12.425480
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KEYWORDS
Semiconductors
Thin films
Oxides
Resistance
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