8 May 2001 Performance analysis and development of high-speed p-i-n infrared sensors prepared on crystalline silicon substrates
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Proceedings Volume 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001); (2001) https://doi.org/10.1117/12.427074
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '01), 2001, Yokohama, Japan
Abstract
In this paper, different structures of high-speed infrared (IR) sensors based on amorphous silicon germanium and amorphous silicon hetero-structures have been successfully developed on crystalline silicon substrates. Experimental results of these developed structures exhibit a superior device performance to that of a traditional pin amorphous photo-sensor prepared on a glass substrate, especially significant improvements in the rise time from 465 (microsecond(s) ) to 195 (microsecond(s) ), and the dark current from 50 ((mu) A) to 3.3 ((mu) A) for 5 (V) reverse bias.
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Chin-Ying Chen, Chin-Ying Chen, Jyh-Jier Ho, Jyh-Jier Ho, Yuen Keun Fang, Yuen Keun Fang, Shih-Fang Chen, Shih-Fang Chen, } "Performance analysis and development of high-speed p-i-n infrared sensors prepared on crystalline silicon substrates", Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); doi: 10.1117/12.427074; https://doi.org/10.1117/12.427074
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