Translator Disclaimer
8 May 2001 Performance analysis and development of high-temperature β-SiC/Si optoelectronic devices with porous silicon substrate
Author Affiliations +
Proceedings Volume 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001); (2001) https://doi.org/10.1117/12.427075
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '01), 2001, Yokohama, Japan
Abstract
In this paper, to suppress dark current of high temperature (beta) -SiC/Si optoelectronic device with a porous substrate has been studied. A pin structure was used to demonstrate the applicability. Experimental results show a twelve-fold improvement in optical gain at 200 degree(s)C operating temperature for the sample prepared on the porous silicon substrate as compared to the sample prepared on the silicon substrate, respectively. The improvement is attributed to the suppression of dark current by the high resistivity and flexibility of the porous substrate. A (beta) -SiC/Si optoelectronic device was fabricated both on porous silicon substrate and conventional silicon substrate, respectively. Experimental results show the optical current ratio can be improved up to 400% at room temperature and 3000% at 200 degree(s)C operating temperature, respectively, with the porous silicon substrate.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jyh-Jier Ho, Yuen Keun Fang, Wen-Tse Hsieh, Chin-Ying Chen, and Wei-Kuo Chia "Performance analysis and development of high-temperature β-SiC/Si optoelectronic devices with porous silicon substrate", Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); https://doi.org/10.1117/12.427075
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Advanced infrared focal-plane arrays
Proceedings of SPIE (August 31 1991)
Micromachined capacitive electret microphone
Proceedings of SPIE (March 09 1999)
Bulk micromachining for sensors and actuators
Proceedings of SPIE (August 09 2000)
Bulk micromachining for sensors and actuators
Proceedings of SPIE (August 17 2000)
Wafer bonding technology and its optoelectronic applications
Proceedings of SPIE (January 21 1997)

Back to Top