8 May 2001 Simple small-sized lock-in light detection system using a gated Si avalanche photodiode
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Proceedings Volume 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001); (2001) https://doi.org/10.1117/12.426999
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '01), 2001, Yokohama, Japan
Abstract
We have constructed a simple small-sized lock-in light detection system using a gated Si avalanche photodiode (APD). The gate mode operation of the APD was achieved by a transistor-transistor-logic (TTL) signal superimposed on a direct current (dc) bias not exceeding the breakdown voltage of the APD. The attainable gain was thirty times larger than that obtained by the normal dc-biased APD. The APD is operated at a frequency of 2f (equals 20 kHz) and its output signal is fed into a compact laboratory-made lock-in amplifier that works in synchrony with the gated APD at a frequency f (equals 10 kHz). The system is useful for detecting a weak signal light superimposed on a large background.
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Tsuyosh Miyata, Tsuyosh Miyata, Tetsuo Iwata, Tetsuo Iwata, Tsutomu Araki, Tsutomu Araki, } "Simple small-sized lock-in light detection system using a gated Si avalanche photodiode", Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); doi: 10.1117/12.426999; https://doi.org/10.1117/12.426999
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