25 September 2001 Deep reactive ion etching of silica for planar lightwave circuits using indigenously developed ECR/RIE system
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Proceedings Volume 4417, Photonics 2000: International Conference on Fiber Optics and Photonics; (2001) https://doi.org/10.1117/12.441305
Event: Photonics 2000: International Conference on Fiber Optics and Photonics, 2001, Calcutta, India
Abstract
Deep dry etching of silica is used for patterning of waveguides for optoelectronic applications. We report on the use of Electron Cyclotron Resonance/Reactive Ion Etching process for deep reactive ion etching of silica glass films using different fluorocarbons as etch gases. 1 by 8 splitter has been used as test structure for the optimization of the etch process. The optimized process parameters like RF/Microwave power, pressure and gas composition etc. for the above have been presented.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Pachauri, Aji Baby, N. Chaturvedi, Harshad S. Kothari, Awatar Singh, Babu Ram Singh, P. N. Dixit, R. Bhattacharya, "Deep reactive ion etching of silica for planar lightwave circuits using indigenously developed ECR/RIE system", Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); doi: 10.1117/12.441305; https://doi.org/10.1117/12.441305
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