Light emission potential of Si-based nanostructures from calculated absorption coefficient

Sumitra Ghosh; P. K. Basu

doi:10.1117/12.441337

25 September 2001 Light emission potential of Si-based nanostructures from calculated absorption coefficient

Sumitra Ghosh, P. K. Basu

Author Affiliations +

Proceedings Volume 4417, Photonics 2000: International Conference on Fiber Optics and Photonics; (2001) https://doi.org/10.1117/12.441337
Event: Photonics 2000: International Conference on Fiber Optics and Photonics, 2001, Calcutta, India

Abstract

Spatial confinement of electrons in ultrathin layers of indirect gap Si, SiGe and SiGeC leads to a spread in the momentum of electrons, so that the envelope function of electrons possesses a sizeable Fourier component at k₀, the wave vector for conduction band minima in the materials. Under this situation, the matrix elements for interband transition may be appreciably enhanced. In this work, the matrix elements for quasi-direct non phonon transitions have been evaluated for Si quantum wells, coupled Si/SiGe quantum wells and SiGeC/Si quantum wells. The absorption coefficient, (alpha) , for all these cases, are then calculated to examine the potential of the structures as emitters. The values of (alpha) are enhanced in quantum wells; however to achieve values of (alpha) , as large as in direct gap GaAs, quantum dots need be considered.

Citation Download Citation

Sumitra Ghosh and P. K. Basu "Light emission potential of Si-based nanostructures from calculated absorption coefficient", Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); https://doi.org/10.1117/12.441337

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Quantum wells

Silicon

Electrons

Absorption

Transition metals

Gallium arsenide

Nanostructures

Show All Keywords

Keywords/Phrases

Search In:

Publication Years