25 September 2001 Microstrip and suspended substrate GaAs bias-T
Author Affiliations +
Proceedings Volume 4417, Photonics 2000: International Conference on Fiber Optics and Photonics; (2001) https://doi.org/10.1117/12.441316
Event: Photonics 2000: International Conference on Fiber Optics and Photonics, 2001, Calcutta, India
Abstract
For photodiode bias-Ts in optoelectronic ICs > 20dB isolation is essential at 2.5-10 GHz for the photodiode to work at both 2.5 and 10 Gbit/s. Designed micro strip and suspended substrate GaAs bias-Ts show 30-140 dB isolation and measured values are approximately 30 dB in the 2.5-10 Ghz range.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. D. Gopalaswamy, Utpal Das, "Microstrip and suspended substrate GaAs bias-T", Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); doi: 10.1117/12.441316; https://doi.org/10.1117/12.441316
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top