Paper
25 September 2001 Schottky diode on Si/Si1-x-yGexCy/Si quantum well heterostructures for long wavelength IR detector
G. S. Kar, S. Maikap, A. Dhar, Samit K. Ray
Author Affiliations +
Proceedings Volume 4417, Photonics 2000: International Conference on Fiber Optics and Photonics; (2001) https://doi.org/10.1117/12.441320
Event: Photonics 2000: International Conference on Fiber Optics and Photonics, 2001, Calcutta, India
Abstract
Si/Si1-x-yGexCy/Si quantum well heterostructures grown by UHVCVD have been characterized in terms of structural and optical properties. The Schottky barrier height (SBH) and ideality factor of PtSi/p-Si1-x-yGexCy/Si diodes have been investigated using the current-voltage characteristics. The valence band offsets of Si/Si0.795Ge0.2C0.005 and Si/Si0.79Ge0.2C0.01 have been extracted using the Schottky diode measurements. A lower value of SBH has been observed in the ternary alloy compared to those in fully strained-Si1-xGex films indicating the potential of former for long wavelength IR detection.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. S. Kar, S. Maikap, A. Dhar, and Samit K. Ray "Schottky diode on Si/Si1-x-yGexCy/Si quantum well heterostructures for long wavelength IR detector", Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); https://doi.org/10.1117/12.441320
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KEYWORDS
Germanium

Silicon

Diodes

Quantum wells

Heterojunctions

Raman spectroscopy

Carbon

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