26 June 2001 Dynamics of 3D representation of interfaces in UV-induced chemical vapor deposition: experiments, modeling, and simulation for silicon nitride thin layers
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Proceedings Volume 4423, Nonresonant Laser-Matter Interaction (NLMI-10); (2001) https://doi.org/10.1117/12.431234
Event: Nonresonant Laser-Matter Interaction (NLMI-10), 2000, St. Petersburg, Russian Federation
Abstract
We study the surface dynamics of silicon nitride films deposited by UV-induced low pressure chemical vapor pressure. Atomic force microscopy measurements show that the surface reaches a scale invariant stationary state coherent wit the Kardar-Parisi-Zhang (KPZ) equation. Discrete geometry techniques are oriented to extra morphological characteristics of surface and bulk which corresponds to computer simulated photodeposit. This allows to determine the physical origin of KPZ scaling to be al ow value of the surface sticking probability, and connected to the surface concentration of activate charged centers, which permits to start the evaluation of the Monte Carlo-molecular dynamics simulator.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean Flicstein, Jean Flicstein, E. Guillonneau, E. Guillonneau, Jose Marquez, Jose Marquez, L. S. How Kee Chun, L. S. How Kee Chun, D. Maisonneuve, D. Maisonneuve, C. David, C. David, Zh. Zh. Wang, Zh. Zh. Wang, Jean Francois Palmier, Jean Francois Palmier, J. L. Courant, J. L. Courant, } "Dynamics of 3D representation of interfaces in UV-induced chemical vapor deposition: experiments, modeling, and simulation for silicon nitride thin layers", Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); doi: 10.1117/12.431234; https://doi.org/10.1117/12.431234
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