26 June 2001 Infrared laser annealing of nanoporous silicon
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Proceedings Volume 4423, Nonresonant Laser-Matter Interaction (NLMI-10); (2001) https://doi.org/10.1117/12.431242
Event: Nonresonant Laser-Matter Interaction (NLMI-10), 2000, St. Petersburg, Russian Federation
We have investigated the correlation of photoluminescence (PL) properties with certain etching conditions and laser annealing of porous silicon (PS). We used the optical second-harmonic generation and photoluminescence methods for studies of IR laser annealing of porous silicon. We observed that IR illumination by series of laser pulses causes decreasing of SH signal and increasing of luminescence efficiency for PS samples.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valerii P. Aksenov, Valerii P. Aksenov, G. N. Mikhailova, G. N. Mikhailova, Johannes Boneberg, Johannes Boneberg, Paul Leiderer, Paul Leiderer, H.-J. Muenzer, H.-J. Muenzer, } "Infrared laser annealing of nanoporous silicon", Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); doi: 10.1117/12.431242; https://doi.org/10.1117/12.431242

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