26 June 2001 Laser annealing of MBE Ge films on the Si substrates
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Proceedings Volume 4423, Nonresonant Laser-Matter Interaction (NLMI-10); (2001) https://doi.org/10.1117/12.431202
Event: Nonresonant Laser-Matter Interaction (NLMI-10), 2000, St. Petersburg, Russian Federation
We report the studies of process of laser annealing of island Ge films on the SI substrates. Based on the time- resolved reflectivity measurements, we obtained the data concerning melting, the dissolution and the resolidification of Ge thin films on the SI after laser annealing with nanosecond laser pulse We observed periodic melting of the interface Ge-Si under an illumination by series of laser pulses that connected with the peculiarity of the solution Ge in Si.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valerii P. Aksenov, Valerii P. Aksenov, G. N. Mikhailova, G. N. Mikhailova, Johannes Boneberg, Johannes Boneberg, Paul Leiderer, Paul Leiderer, H.-J. Muenzer, H.-J. Muenzer, "Laser annealing of MBE Ge films on the Si substrates", Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); doi: 10.1117/12.431202; https://doi.org/10.1117/12.431202


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