26 June 2001 Pulsed-laser deposition of nanometric and micrometric films for optoelectronic applications
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Proceedings Volume 4423, Nonresonant Laser-Matter Interaction (NLMI-10); (2001) https://doi.org/10.1117/12.431212
Event: Nonresonant Laser-Matter Interaction (NLMI-10), 2000, St. Petersburg, Russian Federation
Abstract
We ablated Si, SIO and ITO targets in low-pressure O2 with XeCl and KrF laser pulses at fluences of 5-8 J/cm2. The films were deposited on Si and glass substrates at temperatures of 20-600 degrees C. The substrates were generally set parallel to the target. To reduce droplet deposition, some films were deposited in off-axis configuration or using the so-called 'eclipse method', characterized by a shadow mask between target and substrate. Dense, continuos ITO films with resistivity as low as 1.6 by 10-4 (Omega) cm and a high transparency in the visible region were deposited. Ultra-thin films were deposited and successfully used as electrodes in optoelectronic devices. Dense, stoichiometric, thick SiO2 films were deposited on substrates either at room temperature or heated at moderate temperatures. Droplet density and surface roughness are kept quite low by using special deposition configurations. It results that multi- component films like ITO and silica can be efficiently deposited by using the reactive pulsed laser deposition.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. L. De Giorgi, L. Elia, M. Fernandez, Gilberto Leggieri, Armando Luches, Maurizio Martino, A. Zocco, "Pulsed-laser deposition of nanometric and micrometric films for optoelectronic applications", Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); doi: 10.1117/12.431212; https://doi.org/10.1117/12.431212
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