Semiconductor closed switch based on reverse switched dinistors: new type of switch for pulse power systems of Nd-glass lasers

V. G. Bezuglov; Igor V. Galakhov; S. L. Logutenko; Vasili M. Murugov; V. A. Osin; Ivan N. Pegoev; V. I. Zolotovski

doi:10.1117/12.425579

23 April 2001 Semiconductor closed switch based on reverse switched dinistors: new type of switch for pulse power systems of Nd-glass lasers

V. G. Bezuglov, Igor V. Galakhov, S. L. Logutenko, Vasili M. Murugov, V. A. Osin, Ivan N. Pegoev, V. I. Zolotovski

Author Affiliations +

Proceedings Volume 4424, ECLIM 2000: 26th European Conference on Laser Interaction with Matter; (2001) https://doi.org/10.1117/12.425579
Event: 26th European Conference on Laser Interaction with Matter (ECLIM 2000), 2000, Prague, Czech Republic

Abstract

We describe the operating principle, design and test results for the high-power semiconductor switch which based on the assembly of reverse switched dinistors. This switch has the following operating parameters: (i) operating voltage -25kV, (ii) peak operating current - up to 200kA, (iii) maximum transferred charge - up to 70C. The switch is intended for use by pulse power systems of Nd:glass lasers. The features of switch modes at such banks are discussed.

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V. G. Bezuglov, Igor V. Galakhov, S. L. Logutenko, Vasili M. Murugov, V. A. Osin, Ivan N. Pegoev, and V. I. Zolotovski "Semiconductor closed switch based on reverse switched dinistors: new type of switch for pulse power systems of Nd-glass lasers", Proc. SPIE 4424, ECLIM 2000: 26th European Conference on Laser Interaction with Matter, (23 April 2001); https://doi.org/10.1117/12.425579

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